Evaluation of valence band effective mass in strained-Si p-MOSFETs utilizing SdH oscillation

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

Mon. Mar 21, 2016 9:00 AM - 12:15 PM S422 (S4)

Ken Uchida(Keio Univ.), Tetsuo Endoh(Tohoku Univ.)

11:00 AM - 11:15 AM

〇Aya Shimada¹, Ryosho Nakane¹, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.The University of Tokyo, 2.JST-CREST)

Keywords:Si MOSFET,strained,effective mass