The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[21a-S423-1~10] 13.9 Optical properties and light-emitting devices

Mon. Mar 21, 2016 9:30 AM - 12:00 PM S423 (S4)

Atsushi Koizumi(Osaka Univ.)

11:45 AM - 12:00 PM

[21a-S423-10] Long persistence produced by irradiation of high-energy electron beam in ZnS:Cu phosphors

TORU INAGAKI1,2, TADASHI ISHIGAKI3, KOUTOU OHMI2,4, FUMINOBU HORI5, AKIHIRO IWASE5 (1.Ube Industries, Ltd, 2.Tottori univ., 3.TiFREC, 4.TEDREC, 5.Osaka prefecture Univ.)

Keywords:long persistent phosphor,ZnS:Cu,high energy electron beam irradiation

In recently, research on the long persistent phosphor has been actively carried out. It is very difficult to add a long persistence for nano phosphors. Because nanocrystals have no defects. In this study, we investigate irradiation with high-energy electron beam to ZnS:Cu phosphor to add long persistence. By experiment, it was confirmed that the long persistence was produced by irradiation with electron beam in ZnS:Cu