The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[21a-S423-1~10] 13.9 Optical properties and light-emitting devices

Mon. Mar 21, 2016 9:30 AM - 12:00 PM S423 (S4)

Atsushi Koizumi(Osaka Univ.)

11:00 AM - 11:15 AM

[21a-S423-7] Suppression of Electron Traps in Ce:GAGG Crystals by Mg2+ Ion Co-doping

〇(M1)ryota inaba1, kitaura mamoru2, kamada kei3, kurosawa shunsuke3, ohnishi akimasa2, hara kazushiko4 (1.Yamagata Univ. Graduate School of Science and Engineering, 2.Yamagata Univ. Faculty of Science, 3.Tohoku univ. NICHe., 4.Shizuoka Univ. RIE)

Keywords:scintillater,lattice defects,cerium ion

Infrared absorption spectra of Ce:GAGG crystal and Mg,Ce:GAGG crystal measured at a low temperature under UV-irradiation.
Ce:GAGG crystal are found to exhibit a broad band with a peak at 1.5eV, whereas the band isn’t observed in Ce,Mg:GAGG crystal.
It seems that the broad band is due to electron trap centers, and Mg2+ co-doping suggests that the ions suppresses the formation of trap centers.