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△ [21a-W323-5] Thermoelectric properties of V-doped MnSiγ synthesized by solution growth
Keywords:Thermoelectrics,Higher Manganese Silicides
MnSiγ is known as a p-type thermoelectric material. In general, MnSiγ synthesized by solution growth has layered MnSi precipitates perpendicular to c-axis, and such the precipitates work as defects and deteriorate electrical conductivity. In the present study, we have discovered that the V-substitution for Mn sites dissipates the precipitates in bulk MnSiγ and hence significantly improve the thermoelectric power factor, from 1.12 W/mK-2 (x=0) to 2.33 W/mK-2 (x=0.02) at 900K, of MnSiγ.