[21a-W641-1~12] 6.1 Ferroelectric thin films

△ [21a-W641-8] First-principles simulation of domain dynamics and negative capacitance in ultrathin ferroelectric films

〇Shusuke Kasamatsu¹, Satoshi Watanabe², Seungwu Han³, Cheol Seong Hwang³ (1.ISSP, Univ. of Tokyo, 2.DME, Univ. of Tokyo, 3.DMSE, Seoul National Univ.)

Keywords:ferroelectric,thin film,capacitance

Recent experiments suggest that ultrathin ferroelectric films exhibit negative permittivity. However, the microscopic mechanism is largely unknown, especially the relationship between the dynamics of nanosized polarization domains and emergence of negative capacitance. To clarify this, we performed first-principles simulation of the capacitance of a nanometer-thin ferroelectric/paraelectric capacitor with 180-degree polarization domains.