[21p-H103-1~21] 6.4 薄膜新材料

▼ [21p-H103-1] Flux-mediated epitaxy growth of ferroelectric relaxor Bi-based for high-temperature functional capacitors

〇Benioub Rabie¹、Heddadj Sidi Mohammed¹、伊髙 健治² (1.弘前大　理工、2.弘前大　新エネ研)

キーワード：Dielectric,Flux Epirtaxy,epitaxial

We report the epitaxial growth of (111) oriented BT-BMN films on Nb-doped (111) SrTiO3 substrates by a pulsed laser ablation (PLD) method and prove better epitaxial films can be achieved using Flux- Mediated Epitaxy (FME) at a particular value of temperature. The epitaxy of the deposited films was investigated using an X-ray diffractometer (Rigaku) with Cu Kα1 radiation, the orientation of the films was characterized by the out-of-plane and omega rocking curve scan (FWHM). The surface morphology and roughness of the films were investigated by atomic force microscopy (AFM).