[21p-H103-1~21] 6.4 Thin films and New materials

▼ [21p-H103-1] Flux-mediated epitaxy growth of ferroelectric relaxor Bi-based for high-temperature functional capacitors

〇Rabie BENIOUB¹, Heddadj Sidi mohamed¹, Itaka Kenji² (1.Hirosaki Univ., 2.Hirosaki Univ. NJRISE)

Keywords:Dielectric,Flux Epirtaxy,epitaxial

We report the epitaxial growth of (111) oriented BT-BMN films on Nb-doped (111) SrTiO3 substrates by a pulsed laser ablation (PLD) method and prove better epitaxial films can be achieved using Flux- Mediated Epitaxy (FME) at a particular value of temperature. The epitaxy of the deposited films was investigated using an X-ray diffractometer (Rigaku) with Cu Kα1 radiation, the orientation of the films was characterized by the out-of-plane and omega rocking curve scan (FWHM). The surface morphology and roughness of the films were investigated by atomic force microscopy (AFM).