[21p-H103-1~21] 6.4 Thin films and New materials

▲ [21p-H103-5] Influence of NO doping on the properties of ZnO thin films on a-plane sapphire
grown by catalytic-reaction-assisted chemical vapor deposition

〇Kanji Yasui¹, Koudai Watanabe¹, Ryouichi Tajima¹, Yuki Ishidzuka¹, Yuki Ohashi¹, Yasuhiro Tamayama¹ (1.Nagaoka Univ. Technol.)

Keywords:catalytic reaction,ZnO,NO

Because of its large bandgap (3.37 eV at RT) and large exciton binding energy (60 meV), its application to optoelectronic devices such as light emitting diodes and laser diodes operating in the ultraviolet region has been intensively investigated. We have developed a new CVD method for ZnO film growth using a reaction between an alkylzinc (DMZn) and high-temperature H₂O generated by the Pt-catalyzed exothermic H₂-O₂ reaction. The resulting ZnO films grown on a-plane sapphire (a-Al₂O₃) substrates exhibited excellent electronic property. In this study, we have investigated the influence of the NO gas addition on the ZnO film properties.