[21p-H103-1~21] 6.4 薄膜新材料

▲ [21p-H103-5] Influence of NO doping on the properties of ZnO thin films on a-plane sapphire
grown by catalytic-reaction-assisted chemical vapor deposition

〇安井 寛治¹、渡邊 航大¹、田島 諒一¹、石塚 侑己¹、大橋 優樹¹、玉山 泰宏¹ (1.長岡技科大)

キーワード：catalytic reaction,ZnO,NO

Because of its large bandgap (3.37 eV at RT) and large exciton binding energy (60 meV), its application to optoelectronic devices such as light emitting diodes and laser diodes operating in the ultraviolet region has been intensively investigated. We have developed a new CVD method for ZnO film growth using a reaction between an alkylzinc (DMZn) and high-temperature H₂O generated by the Pt-catalyzed exothermic H₂-O₂ reaction. The resulting ZnO films grown on a-plane sapphire (a-Al₂O₃) substrates exhibited excellent electronic property. In this study, we have investigated the influence of the NO gas addition on the ZnO film properties.