3:45 PM - 4:00 PM
△ [21p-H111-12] Resistive switching properties of oxygen vacancy distribution controlled rutile TiO2
Keywords:titanium oxide,resistance change,memristor
Presentation information
Oral presentation
6 Thin Films and Surfaces » 6.3 Oxide electronics
[21p-H111-1~22] 6.3 Oxide electronics
Mon. Mar 21, 2016 1:00 PM - 6:45 PM H111 (H)
Hisashi Shima(AIST), Yasuhisa Naitoh(AIST)