The 63rd JSAP Spring Meeting, 2016

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Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[21p-H111-1~22] 6.3 Oxide electronics

Mon. Mar 21, 2016 1:00 PM - 6:45 PM H111 (H)

Hisashi Shima(AIST), Yasuhisa Naitoh(AIST)

4:30 PM - 4:45 PM

[21p-H111-14] c-AFM of Annealed HfO2-thinfilm

〇Guento Misawa1, Hisashi Shima1, Yasuhisa Naitoh1, Hiroyuki Akinaga1 (1.AIST)

Keywords:Hafnium Oxide,c-AFM,Redox

The onset of conducting spots on the HfO2-thinfilm on Ti was observed by conductive-AFM after the thermal process necessary to activate transition-metal-oxide-based resistive random access memory (ReRAM).