Observation of structural changes of MoOx/Al2O3 multilayer ReRAMs by in-situ TEM

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Mon. Mar 21, 2016 1:00 PM - 6:45 PM H111 (H)

1:15 PM - 1:30 PM

〇Shuichiro Hirata¹, Akihito Takahashi¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.IST, Hokkaido Univ.)

Keywords:TEM,ReRAM