The 63rd JSAP Spring Meeting, 2016

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Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[21p-H111-1~22] 6.3 Oxide electronics

Mon. Mar 21, 2016 1:00 PM - 6:45 PM H111 (H)

Hisashi Shima(AIST), Yasuhisa Naitoh(AIST)

6:15 PM - 6:30 PM

[21p-H111-21] Consideration of Soret diffusion as a driving force of resistive switching in ReRAM

〇Kentaro Kinoshita1,2,3, Ryosuke Koishi1, Takumi Moriyama1,2, Kouki Kawano1, Hidetoshi Miyashita1,2, Sang-seok Lee1,2, Satoru Kishida1,2 (1.Tottori Univ., 2.TiFREC, 3.TEDREC)

Keywords:ReRAM,simulation,oxygen vacancy