[21p-H111-1~22] 6.3 Oxide electronics

△ [21p-H111-9] Characterization of Resistive Transition Phenomena of Sputter-Deposition SiO₂ Films

〇Takuya Akano¹, Rintaro Yamaguchi¹, Shingo Sato¹, Yasuhisa Omura¹ (1.Kansai Univ.)

Keywords:SiO2,resistive transition phenomena,compliance current

In this study, we successfully demonstrated that the reset event strongly depends on the compliance current at the set event. It was clrealy shown that the increase and the decrease in the compliance current rules the primary mechanism of the reset event.