The 63rd JSAP Spring Meeting, 2016

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Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals

[21p-H112-1~13] 15.3 III-V-group epitaxial crystals

Mon. Mar 21, 2016 1:15 PM - 4:45 PM H112 (H)

Tomoyuki Miyamoto(Titech)

4:30 PM - 4:45 PM

△ [21p-H112-13] Electrical characteristics of rapid heat-treated InSb film

〇(D)Charith Jayanada Koswaththage1, Takashi Noguchi1, Shinichi Taniguchi2, Shokichi Yoshitome2 (1.Univ. of the Ryukyus, 2.e-tec INC.)

Keywords:InSb,Thermal Annealing,Hall Mobility