[21p-H112-1~13] 15.3 III-V-group epitaxial crystals

[21p-H112-5] Annealing effect of InGaAsN/GaAsSb quantum wells diodes on InP substrates(Ⅱ)

〇Yuichi Kawamura^1,2, Ikuya Shishido¹, Sho Tanaka¹, Shuichi Kawamata^1,2 (1.OPU, 2.ROUC)

Keywords:compound semiconductor,quantum well

Annwaling effect on emission properties was studied for InGaAsN/GaAsSb type II diodes. It was found that remarkable red-shift as long as 4 mm was observed by 600℃ annealing.