The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21p-H121-1~17] 15.4 III-V-group nitride crystals

Mon. Mar 21, 2016 1:15 PM - 6:00 PM H121 (H)

Takao Miyajima(Meijo Univ.), Ryota Ishii(Kyoto Univ.), Shugo Nitta(Nagoya Univ.)

3:30 PM - 3:45 PM

[21p-H121-9] Enhanced radiative recombination processes in AlGaN quantum wires fabricated on sapphire (0001) vicinal substrates

Minehiro Hayakawa1, Yuki Hayashi1, Shuhei Ichikawa1, Mitsuru Funato1, Yoichi Kawakami1 (1.Kyoto Univ.)

Keywords:AlGaN,Quantum wire,radiative recombination

We demonstrated by PL measurement that the thermal quenching of AlGaN quantum wires are much weaker than that of conventional quantum wells. This result strongly suggests that prolonging of radiative lifetime at higher temperature is remarkably suppressed, which is a specific property of quantum wire.