5:15 PM - 5:30 PM
△ [21p-H137-16] Gamma-ray tolerance of CdTe photodiode for radiation tolerant FEA image sensor
Keywords:CdTe,II-VI compounds,field emitter array
The effect of gamma irradiation on two types (superstrate- and substrate-type) of CdS/CdTe photodiodes, which we have proposed as potential photoconducting films for compact image sensors with a field emitter array (FEA), was investigated. A 60Co gamma-ray source was employed, and the total gamma irradiation dose was more than 1 MGy. For the superstrate-type structure, the irradiation caused the short-circuit current density (JSC) to decrease, probably due to the resulting decreased transmittance of the glass substrate. On the other hand, little degradation of the I-V characteristics or spectral response was observed after the gamma irradiation for the substrate-type structure. These results suggest that, taking into account the decrease in transmittance of the glass substrate, the CdS/CdTe photodiodes have sufficient tolerance to high gamma-ray exposure.