The 63rd JSAP Spring Meeting, 2016

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7 Beam Technology and Nanofabrication » 7.2 Applications and technologies of electron beams

[21p-H137-1~22] 7.2 Applications and technologies of electron beams

Mon. Mar 21, 2016 1:15 PM - 7:00 PM H137 (H)

Yoichiro Neo(Shizuoka Univ.), Hitoshi Nakahara(Nagoya Univ.), Yasuhito Gotoh(Kyoto Univ.)

5:30 PM - 5:45 PM

[21p-H137-17] Characterization of photoconductive targets for radiation tolerant FEA image sensors

〇Tomoaki Masuzawa1, Yoichiro Neo1, Tamotsu Okamoto2, Masaharu Nagao3, Yasuhito Gotoh4, Hidenori Mimura1 (1.Shizuoka Univ., 2.Kisarazu College, 3.AIST, 4.Kyoto Univ.)

Keywords:radiation tolerant,field emitter,imaging device

In this study, we have developed photoconductors for radiation tolerant imaging devices. CdTe/CdS diodes and antimony trisulfide films were fabricated as photoconductors, and were characterized using scanning electron beam to detect photo signals. The evaluation method, as well as its results on some of the photoconductors, will be presented.