1:30 PM - 3:30 PM
[21p-P10-19] Optimum Structures for Gamma-ray Radiation Resistant SiC-MOSFETs
Keywords:SiC MOSFET,gamma-ray,oxide thickness
We investigated the oxide thickness dependence of gamma-ray irradiation response on SiC MOSFETs to optimize the structures of them.The Vth of bigger oxide thickness felt in normally-on at fewer dose than that of smaller one. Thickness of gate oxide of SiC MOSFET influences the radiation tolerance and, in addition, the smaller thickness has a higher radiation tolerance.