[21p-P2-1~7] 3.13 Semiconductor optical devices

[21p-P2-7] The Evaluation of QDIP Array Sensor by Infrared Imaging

〇Chenhui Huang¹, Tomo Tanaka¹, Sota Kagami^1,3, Masahiro Kakuda³, Katsuyuki Watanabe⁴, Sei Inoue², Kenji Nanba², Yuichi Igarashi^1,3, Masahiro Tanomura¹, Yoshihiro Nambu^1,3, Tsuyoshi Yamamoto^1,3, Shinichi Yorozu^1,3, Yasuhiko Arakawa^3,4 (1.NEC SE Labs., 2.NEC MI Division, 3.NanoQuine, 4.IIS the Univ. of Tokyo)

Keywords:QDIP sensor,FPA,Infrared imaging

Thermal infrared imaging technology is applied to the field of the industry, the medical treatment and the search of resources. In these researches, the further high sensitivity is requested. A quantum dot infrared detector was studied as the infrared detector which is sensitive and is low dark current in recent years, and our group confirmed the improvement of ratio detection D* of single device QDIP with approach barrier layer structure. Wavelength 5.5 um as which its structure was adopted by this research. An array sensor was manufactured by QDIP with a sensitivity peak to infrared light of 5.5 um and the performance was evaluated for imaging process and the acquired infrared image were performed.