1:30 PM - 3:30 PM
[21p-P9-2] XAFS studies on GeSn thin-film grown by MOCVD method
Keywords:GeSn,XAFS,Synchrotron Radiation
GeSn thin-film is attractive for high-mobility channel, strain stressor, or optical application. However, solubility limit of Sn within a GeSn is considered to be as low as 1 atomic % order, and new GeSn growth method and characterization of GeSn structure are required. Then, we adopted the X-ray Absorption Fine Structure (XAFS) hard X-ray photoelectron spectroscopy to characterize Sn fine structure within GeSn films grown by the newly proposed MOCVD method.