[21p-P9-1~9] 15.5 Group IV crystals and alloys

[21p-P9-2] XAFS studies on GeSn thin-film grown by MOCVD method

〇Koji Usuda¹, Masahiko Yoshiki¹, Kohei Suda², Atsushi Ogura², Mitsuhiro Tomita¹ (1.Toshiba Corp., 2.Meiji Univ.)

Keywords:GeSn,XAFS,Synchrotron Radiation

GeSn thin-film is attractive for high-mobility channel, strain stressor, or optical application. However, solubility limit of Sn within a GeSn is considered to be as low as 1 atomic % order, and new GeSn growth method and characterization of GeSn structure are required. Then, we adopted the X-ray Absorption Fine Structure (XAFS) hard X-ray photoelectron spectroscopy to characterize Sn fine structure within GeSn films grown by the newly proposed MOCVD method.