[21p-P9-1~9] 15.5 Group IV crystals and alloys

[21p-P9-7] Morphologies of tensile-strained Si/relaxed SiGe/Si(110) heterostructures employing vicinal substrate and device characteristic

〇naoto utsuyama¹, kei sato¹, takane yamada¹, keisuke arimoto¹, junji yamanaka¹, kiyokazu nakagawa¹, kousuke hara¹, noritaka usami², kentaro sawano³ (1.CCST Univ. of Yamanashi, 2.Nagoya Univ., 3.ARL Tokyo City Univ.)

Keywords:semiconductor,strained-Si