[21p-S221-1~14] 13.10 Compound solar cells

△ [21p-S221-6] Time resolved photoluminescence measurement of CuInSe₂/CuGaSe₂ single quantum well

〇Canyu Jiang¹, Sathiabama Thiru², Yoshiki Nakamura¹, Yoshiji Horikoshi¹, Atsushi Tackeuchi¹ (1.Waseda Univ., 2.UTM Razak School)

Keywords:carrier lifetime,CIS,quantum well

CuInSe₂ (CIS) and related materials can be applied to variety of electro-optic devices. However, the carrier lifetime of CIS/CuGaSe₂ (CGS) QWs has not been investigated yet. In this study, we report the carrier lifetime of CIS/CGS single QW obtained by time-resolved photoluminescence (PL) measurement. As a result, the carrier lifetime of CIS/CGS QWs is closed to the carrier lifetime of CIS thin film with Cu rich (Cu/In > 1) composition. Moreover, the behavior of temperature dependence is similar to the case of Ⅲ-Ⅴ compound semiconductor QW.