[21p-S222-1~9] Advanced Fabrication System for Metal Oixde Thin Films

[21p-S222-3] Formation of metal oxide thin films by ECR plasma sputtering

〇Housei Akazawa¹ (1.NTT DIC)

Keywords:ECR plasma sputtering,defect control,combinatorial sputtering

The principles and characteristics of ECR plasma sputtering is reviewed. Emphasis is placed on its low damge deposition, monitoring the target condition, control of oxidized state for a wide dynanic range, and firm adhesion to the substrate. I will also talk about several approaches to control defects and impurities, which is a key to achieve opto-electronic devices.