[21p-S223-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

[21p-S223-5] Photogenerated carrier lifetimes and defect state density in nano-scale structural defects on a semiconductor surface

〇Keiki Fukumoto¹, Ken Onda², Shin-ya Koshihara² (1.KEK, 2.Tokyo Inst.)

Keywords:semiconductor,nano-scale structural defects,ultrafast dynamics

With scaling down of the semiconductor devices, the influence of structural heterogeneity and local the carrier transport characteristics have become an important issue. We have developed a time-resolved photoemission electron microscopy with a high spatio-temporal resolution (100 nm and 100 fs) to observe ultrafast carrier dynamics in nano-scale surface defects. By SHR model the defect density in each structural defect was estimated.