The 63rd JSAP Spring Meeting, 2016

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13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[21p-S223-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 21, 2016 1:30 PM - 6:00 PM S223 (S2)

Kenji Yamaguchi(JAEA), Kosuke Hara(Univ. of Yamanashi)

3:45 PM - 4:00 PM

[21p-S223-9] Raman scattering studies of strained Ge films on Si substrates

〇(B)Shunya Sakai1, Kazuya Yamamura1, Hiroshi Nishigaki1, Noriyuki Hasuike1, Hiroshi Harima1, Woo Sik Yoo2 (1.Kyoto Inst.Tech., 2.Wafer Masters, Inc.)

Keywords:germanium,strain,Raman scattering