[21p-S323-1~7] 9.3 Nanoelectronics

[21p-S323-3] A single electron device fabricated by repeated dispersion of gold nano particles

〇Masataka Moriya¹, Huong Tran¹, Kazuhiko Matsumoto¹, Hiroshi Shimada¹, Yasuo Kimura², Ayumi Hirano-Iwata³, Yoshinao Mizugaki¹ (1.Univ. of Electro-Comm., 2.Tokyo Univ. Technology, 3.Tohoku Univ.)

Keywords:single electron device,nano particles

Drain, source and gate electrodes were fabricated by using shadow evaporation method, and a single electron device fabricated by repeated dispersion of gold nano particles on these electrodes. Coulomb blockade region was observed on current - voltage curves.