The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

9 Applied Materials Science » 9.3 Nanoelectronics

[21p-S323-1~7] 9.3 Nanoelectronics

Mon. Mar 21, 2016 4:00 PM - 5:45 PM S323 (S3)

Seiya Kasai(Hokkaido Univ.)

4:30 PM - 4:45 PM

[21p-S323-3] A single electron device fabricated by repeated dispersion of gold nano particles

Masataka Moriya1, Huong Tran1, Kazuhiko Matsumoto1, Hiroshi Shimada1, Yasuo Kimura2, Ayumi Hirano-Iwata3, Yoshinao Mizugaki1 (1.Univ. of Electro-Comm., 2.Tokyo Univ. Technology, 3.Tohoku Univ.)

Keywords:single electron device,nano particles

Drain, source and gate electrodes were fabricated by using shadow evaporation method, and a single electron device fabricated by repeated dispersion of gold nano particles on these electrodes. Coulomb blockade region was observed on current - voltage curves.