The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[21p-S423-1~19] 13.9 Optical properties and light-emitting devices

Mon. Mar 21, 2016 1:45 PM - 6:45 PM S423 (S4)

Haruki Fukada(Kanazawa Inst. of Tech.), Nanai Yasushi(Nihon Univ.)

2:15 PM - 2:30 PM

[21p-S423-3] Wider Color Gamut LED Backlight using β-sialon:Eu2+ and K2SiF6:Mn4+ Phosphors

Rong-Jun Xie1, Le Wang2, Wang Xiaojun1, Kohsei Takahashi1, Takashi Takeda1, Naoto Hirosaki1, Makoto Izumi3, Ken-ichi Yoshimura3 (1.NIMS, 2.China Jiliang Univ., 3.Sharp)

Keywords:Phosphor,LED backlight,Narrow-band

In this presentation, we propose to combine both narrow-band green (β-sialon:Eu2+) and red (K2SiF6:Mn4+) phosphors with a blue InGaN chip to achieve white light-emitting diodes (wLEDs) with a large color gamut and a high efficiency for use as the liquid crystal display (LCD)backlighting. The prepared three-band wLEDs have a high color temperature of 11,184 - 13,769 K (i.e., 7,828 - 8,611 K for LCD displays), and a luminous efficacy of 91 – 96 lm/W, measured under an applied current of 120 mA. The color gamut defined in the CIE 1931 and CIE 1976 color spaces are 85.5 - 85.9% and 94.3 - 96.2% of the NTSC standard, respectively.