[21p-S611-1~8] 3.15 Silicon photonics

△ [21p-S611-7] Modulation bandwidth improvement of MOS optical modulators based on strained SiGe

〇(D)JAEHOON HAN^1,2,3, MITSURU TAKENAKA^1,2, SHINICHI TAKAGI^1,2 (1.The Univ. of Tokyo, 2.JST-CREST, 3.JSPS research fellow)

Keywords:Si photonics,Strained SiGe,MOS optical modulator

Si MOS optical modulator is a promissing solution for the high-performance optical modulator of Si photonics. Its modulation efficiency is higher than other structures such as pn junction. Furthermore, by an equvalent oxide thickness (EOT) scaling, further improvement is achievable. However, the degradation of modulation bandwidth is a critical problem due to its large capacitance. To solve this problem, we expect the modulation bandwidth improvement by using the light hole effective mass of strained SiGe.