[21p-S611-1~8] 3.15 Silicon photonics

[21p-S611-8] Study on Si Optical Modulator, Using Strained SiGe Layer with in-situ B doping

〇Junichi Fujikata¹, Masataka Noguchi¹, Jaehoon Han², Shigeki Takahashi¹, Takahiro Nakamura¹, Mitsuru Takenaka² (1.PETRA, 2.Univ. of Tokyo)

Keywords:silicon optical modulator,strained SiGe

We studied on a Si optical modulator, using a strained SiGe layer with in-situ B doping. By selective growth of a strained SiGe layer with in-situ B doping on the lateral pn junction structure, low optical loss of 1dB/mm and high modulatiron efficiency of 1.05Vcm, which shows the efficient Si optical modulator with around 10 dBV of FOM. We also demonstrated high-speed operation of 25 Gbps with 1.5 Vpp drive voltage.