[21p-W241-1~21] 10.2 Spin torque, spin current, circuits, and measurement technologies

▼ [21p-W241-11] Quantitative analysis of the nuclear spin dynamics in GaAs with irradiation by RF magnetic field

〇(D)Mahmoud Rasly Eldesouky¹, Zhichao Lin¹, Masafumi Yamamoto¹, Tetsuya Uemura¹ (1.Hokkaido Univ.)

Keywords:dynamic nuclear polarization,spin temperature,Overhauser field

Nuclear spin (NS) system is a key technology for implementing quantum bits in solid-state quantum information memories. We observed interesting behaviors for NS dynamics throughout the oblique Hanle effect measurement, using a spin injection device with Co₂MnSi/CoFe/n-GaAs Schottky tunnel junction, with and without irradiation by rf magnetic field (RF). Furthermore, we simulated the transient response of the nuclear spins by incorporating the concept of the time dependence of the nuclear spin temperature for the case without RF. The subject of this attempt is to quantitatively analyze the transient response of NSs with RF. These analyses lay the fundamental basis of the nuclear spin dynamics for the quantum information applications.