[21p-W241-1~21] 10.2 Spin torque, spin current, circuits, and measurement technologies

▼ [21p-W241-3] An effect of gate voltage on thermally generated spin signals in Si spin-MOSFET

〇Naoto Yamashita¹, Yuichiro Ando¹, Hayato Koike², Tomoyuki Sasaki², Shinji Miwa³, Kazuhito Tanaka³, Yoshishige Suzuki³, Masashi Shiraishi¹ (1.Kyoto Univ., 2.TDK Corp., 3.Osaka Univ.)

Keywords:spin caloritronics,spin MOSFET