[21p-W521-1~18] 12.4 Organic light-emitting devices and organic transistors

[21p-W521-16] High-carrier-mobility field-effect transistors based on organic-inorganic perovskite semiconductors

〇Toshinori Matsushima^1,2, Sunbin Hwang¹, Atula S. D. Sandanayaka^1,2, Chuanjiang Qin^1,2, Fujihara Takashi³, Adachi Chihaya^1,2 (1.OPERA, Kyushu Univ., 2.JST ERATO, 3.ISIT)

Keywords:Organic-inorganic perovskite,Field-effect transistor,Surface treatment

In this study, we have demonstrated that surface treatment of a gate insulator surface with NH₃I-SAM markedly improves perovskite film quality and transistor performance. A reason for high-quality perovskite films formed is that the NH₃I terminal groups on the substrate work as part of the perovskite structure. This surface treatment provides a significantly improved field-effect hole mobility up to 12 cm² V^–1 s^–1 (7.7 cm² V^–1 s^–1 on average), which is the highest value in all perovskite transistors.