[21p-W521-1~18] 12.4 Organic light-emitting devices and organic transistors

[21p-W521-17] Low-voltage driving characteristics of solution-processed,
polycrystalline Ph-BTBT-10 FET with low-k gate dielectric

〇Masafumi Kunii¹, Iino Hiroaki¹, Jun-ichi Hanna¹ (1.Tokyo Inst. of Tech.)

Keywords:highly ordered liquid crystal,low voltage organic field effect transistor,solution processed

Low-voltage operable organic field effect transistors (OFETs) of 2-decyl-7-phenyl-[1] benzothieno[3,2-b][1] benzothiophene (Ph-BTBT-10) with low-k polystyrene/SiO₂ hybrid gate dielectric are fabricated using highly ordered smectic E (SmE) liquid crystalline phase. The solution-processed, bottom-gate, bottom-contact Ph-BTBT-10 OFET with low-k polystyrene/SiO₂ hybrid gate dielectric operated at −2V exhibits outstanding characteristics of saturation mobility up to 4.9 cm/Vs with the subthreshold swing (SS) of 79 mV/decade.