Vertical GaN Diode with Field Plate Termination Using High k Dielectrics

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Mon. Mar 21, 2016 1:45 PM - 5:00 PM W541 (W5)

Kenji Shiojima(Univ. of Fukui), Kozo Makiyama(Fujitsu Lab.)

4:30 PM - 4:45 PM

〇Michitaka Yoshino¹, Fumimasa Horikiri², Hiroshi Ohta¹, Yasuhiro Yamamoto¹, Tomoyoshi Mishima¹, Tohru Nakamura¹ (1.Hosei Univ., 2.sciocs)

Keywords:GaN,high-k,diode