[22a-H116-1~6] 15.2 II-VI and related compounds

[22a-H116-5] Emissions from deep levels in high-resistivity ZnTe crystals doped with group III elements

〇Satoru Seto¹, Kazuhiko Suzuki² (1.NIT, Ishikawa Coll., 2.HUS)

Keywords:semiconductor,photoluminescence,deep level

ZnTe is a unique II-VI compound semiconductor that p-type conduction can be easily obtained by phosphorous doping. Group III elements such as gallium or indium are expected to act as donors in ZnTe. However, these elements act as dopants for high resistivity and not as donors in ZnTe. It is therefore still difficult to obtain n-type low conductive ZnTe. In CdTe, on the other hand, group III elements act as donors substituting on Cd sites. In this study, we measured low temperature and temperature dependent PL spectra of high resistive ZnTe crystals doped with gallium or indium and compared the spectra with those of high resistive CdTe.