N-face (000-1) InN/GaN double heterostructures grown by MOVPE

Tetsuya Akasaka; ChiaHung Lin; Hideki Yamamoto; Kazuhide Kumakura

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[22a-H121-1~11] 15.4 III-V-group nitride crystals

Tue. Mar 22, 2016 8:45 AM - 11:45 AM H121 (H)

Tetsuya Akasaka(NTT), Yoshiki Saito(TOYODA GOSEI Co., Ltd)

11:15 AM - 11:30 AM

[22a-H121-10] N-face (000-1) InN/GaN double heterostructures grown by MOVPE

〇Tetsuya Akasaka¹, ChiaHung Lin¹, Hideki Yamamoto¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:indium nitride,nitrogen polarity,MOVPE

We have investigated the initial growth stages of N-face InN (000-1) films in MOVPE growth, comparing with those of In-face InN (0001) films. In addition, we fabricated N-face (000-1) InN/GaN double heterostructures and observed photoluminescence of InN near-band-edge emission.