Flow-rate Modulation Epitaxy of AlN on Nonpolar m-plane AlN Substrates

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Tue. Mar 22, 2016 8:45 AM - 11:45 AM H121 (H)

Tetsuya Akasaka(NTT), Yoshiki Saito(TOYODA GOSEI Co., Ltd)

10:30 AM - 10:45 AM

〇Junichi Nishinaka¹, Yoshitaka Taniyasu¹, Tetsuya Akasaka¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:Aluminum nitride,nonpolar,flow-rate modulation epitaxy