The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

3 Optics and Photonics » 3.9 Terahertz technologies

[22a-H135-1~13] 3.9 Terahertz technologies

Tue. Mar 22, 2016 9:00 AM - 12:30 PM H135 (H)

Toshihiko Kiwa(Okayama Univ.), Naofumi Shimizu(NTT)

11:15 AM - 11:30 AM

[22a-H135-9] Relativistic Doppler reflection of THz light via photo-induced carriers in Si

〇(PC)Nanase Kohno1, Ryuji Itakura1, Masaaki Tsubouchi1 (1.JAEA)

Keywords:terahertz,doppler shift,carrier dynamics

Plasma is generated when semiconductors are photo-excited, and it reflects a THz light if a density of free electrons is sufficiently high. Plasma acts as a flying mirror with a velocity which is identical to that of pump light because plasma is generated with a proceeding of pump light into a semiconductor. Then, a counter-propagating THz light is up-shifted via relativistic Doppler reflection. In this study, sample semiconductor is silicon, and we investigated a Doppler reflection of THz light by observing an intensity spectrum and waveform of THz light. From the pump energy dependence, phase and frequency shifts of THz light is increased with pump energy. We constructed a model in consideration of phase shift and Doppler reflection.