The 63rd JSAP Spring Meeting, 2016

Presentation information

Poster presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[22a-P4-1~27] 6.3 Oxide electronics

Tue. Mar 22, 2016 9:30 AM - 11:30 AM P4 (Gymnasium)

9:30 AM - 11:30 AM

[22a-P4-12] Growth of bismuth oxide by atomic layer deposition

Mitsuhiro Hirabayashi1, Yu Tanaka1, Syuhei Komatsu1 (1.Sophia Univ.)

Keywords:thin film,bismuth oxide,atomic layer deposition

Among bismuth oxide, Bi2O3 has optical, electrical, piezoelectric properties and oxide ion conductivity, so it is applicable to various techniques. In this study, we grew bismuth oxide thin films by atomic layer deposition which has advantages of controlling film thickness, morphology and the chemical composition, and characterization of them was carried out.