[22a-P4-1~27] 6.3 Oxide electronics

[22a-P4-14] Growth of M2-pahse VO₂ thin films on conductive ITO and its IMT and self-oscillation characteristics

〇Suruz Mian Md¹, Kenta Sato¹, Yusuke Anda¹, Yosuke Shiina¹, Kunio Okimura¹, Joe Sakai² (1.Tokai Univ., 2.GREMAN, Univ. Tours)

Keywords:Vanadium dioxide (VO2),M2 Phase, Insulator-metal gtransition (IMT),Self-oscillation

In this study, the growth of VO2 M2 phase was performed on conductive ITO films by ICP-assisted sputtering method. Out-of-plane IMT, electric field induced resistance switching, and self-oscillation were investigated. We observed more than two order of magnitude change in resistance at wide range of 60~130ºC while in temperature dependent XRD, structural phase transition was obtained at around 70ºC, suggesting charcteristic property in VO2 M2 phase. Furthermore, we realized several hundred kHz orders oscillation frequency in self-sustaing oscillation measurement.