[22a-P4-1~27] 6.3 Oxide electronics

[22a-P4-22] Study of ITO Buffer Layer for the Improvement of Hole Injection from ITO Anode

〇Youichi Hoshi¹, Daichi Hamaguchi¹, Shin-ichi Kobayashi¹, Yutaka Sawada¹, Takayuki Uchida¹ (1.Tokyo Polytechnic Univ.)

Keywords:OLED,hole injection characteristics,ITO buffer layer

In order to improve the hole-injection properties from ITO anode to hole transfer organic material NPB, we studied the effect of the insertion of well oxidized ITO buffer layer between the ITO anode and NPB. As a result, it became clear that the insertion of the ITO buffer layer with thickness of about 0.6 nm was effective to reduce the hole injection voltage. Compared with the surface oxidization of ITO anode, the insertion of ITO buffer layer led to much larger reduction in hole injection voltage.