[22a-P6-1~19] 15.4 III-V族窒化物結晶

▲ [22a-P6-15] Pico-second Laser epitaxy for GaN regrowth

〇(P)Ferreyra Romualdo Alejandro¹、Kazumoto Tomohiro¹、Matsumura Hideki¹、Suzuki Asamira²、Ueda Daisuke¹ (1.Kyoto Inst. of Tech.、2.R&D, Panasonic Corp.)

キーワード：Picosecond PLD,n+-GaN regrowth,Power FET

In this work, we present results on n⁺-GaN regrowth, for reduction of on-resistance (Ron) in power FET in low-voltage range, by Picosecond Pulse Laser Deposition. An alternative low cost technique, that can offer very attractive advantages such as, reduced material consumption, low growth temperature, and simplified parameters to control growth conditions. As high carrier densities as 5*10×10¹⁹ cm^-3 were obtained, and which will help to lower the contact resistance of GaN power devices.