The 63rd JSAP Spring Meeting, 2016

Presentation information

Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[22a-P6-1~19] 15.4 III-V-group nitride crystals

Tue. Mar 22, 2016 9:30 AM - 11:30 AM P6 (Gymnasium)

9:30 AM - 11:30 AM

[22a-P6-3] Growth of MOVPE InN Epitaxial Growth on Epitaxial Graphene Surfaces on 4H-SiC(0001) Substrate

yuki tomatsu1, yuma doko1, daiki ishimaru1, akihiro hashimoto1 (1.Fukui Univ.)

Keywords:InN

Sapphire substrate is generally used as a substrate of Ⅲ-nitride semiconductors growth. However, it is very difficult to obtain the high quality p-type InN layer for various device applications at present. Epitaxial graphene formed on SiC substrate has been expected as a suitable one for the high quality InN epitaxial growth, because of the reductions for the large lattice and thermal expansion coefficient mismatches between the substrate and the InN epitaxial layer. In this report, we have investigated on the effects of the AlN initial layer for the InN growth on the epitaxial graphene substrate by MOVPE.