[22a-P6-1~19] 15.4 III-V-group nitride crystals

[22a-P6-3] Growth of MOVPE InN Epitaxial Growth on Epitaxial Graphene Surfaces on 4H-SiC(0001) Substrate

〇yuki tomatsu¹, yuma doko¹, daiki ishimaru¹, akihiro hashimoto¹ (1.Fukui Univ.)

Keywords:InN

Sapphire substrate is generally used as a substrate of Ⅲ-nitride semiconductors growth. However, it is very difficult to obtain the high quality p-type InN layer for various device applications at present. Epitaxial graphene formed on SiC substrate has been expected as a suitable one for the high quality InN epitaxial growth, because of the reductions for the large lattice and thermal expansion coefficient mismatches between the substrate and the InN epitaxial layer. In this report, we have investigated on the effects of the AlN initial layer for the InN growth on the epitaxial graphene substrate by MOVPE.