[22a-P6-1~19] 15.4 III-V-group nitride crystals

[22a-P6-9] Mg doping behavior of NH₃ decomposition catalyst-assisted MOVPE In_xGa_1-xN (x~0.35)

〇Akio Yamamoto^1,2, Kazuki Kodama^1,2, Naoteru Shigekawa³, Takashi Matsuoka⁴, Masaaki Kuzuhara¹ (1.Univ. of Fukui, 2.JST-CREST, 3.Osaka City Univ., 4.Tohoku Univ.)

Keywords:nitride semiconductor,InGaN,Mg doping

The Mg doping behavior of In_xGa_1-xN (x~0.35) grown by NH₃ decomposition catalyst-assisted MOVPE has been studied. The In composition x in In_xGa_1-xN is markedly decreased with increasing Cp2Mg flow rate, indicating that Mg atoms are preferentially incorporated at sites where In atoms should be incorporated. The highest hole concentration obtained here is 1x10¹⁹ cm^-3.