The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.2 Graphene

[22a-S011-1~16] 17.2 Graphene

Tue. Mar 22, 2016 9:00 AM - 1:15 PM S011 (S0)

Kenzo Maehashi(TUAT)

11:45 AM - 12:00 PM

[22a-S011-11] Graphene Nanoribbon Fabrication by Gate-Controlled Edge-Selective Photo-Oxidation

Morihiro Matsumoto1, 〇Ryo Nouchi1 (1.Osaka Pref. Univ.)

Keywords:graphene nanoribbon,photo-oxidation,field-effect surface chemistry

Graphene is known to be easily oxidized by ultraviolet light irradiation in air. We have shown that the photo-oxidation can be controlled by using a field-effect-transistor configuration [Appl. Phys. Lett. 103 (2013) 201605]. The transistor-controlled photo-oxidation occurs selectively at the edges of the graphene channel, and proceeds into the channel center. The photo-oxidized graphene is an insulator, and thus this phenomenon enables us to narrow the graphene channel. In this presentation, we will report on fabrication of a graphene nanoribbon by means of the transistor-controlled photo-oxidation of graphene.